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dcx (xxxx) u small signal complementary pre-biased dual transistor features ? epitaxial planar die construction ? built-in biasing resistors ? surface mount package suited for automated assembly ? lead free/rohs compliant (note 3) ? "green" device (note 4 and 5) m echanical data ? case: sot-363 ? case material: molded plasti c. ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminals: solderable per mil-std-202, method 208 ? lead free plating (matte tin finish annealed over alloy 42 leadframe). ? terminal connecti ons: see diagram ? marking information: see page 11 ? ordering information: see page 11 ? weight: 0.006 grams (approximate) p/n r1 r2 marking dcx124eu 22k 22k c17 dcx144eu 47k 47k c20 dcx114yu 10k 47k c14 dcx123ju 2.2k 47k c06 dcx114eu 10k 10k c13 dcx143tu 4.7k - c07 dcx143eu 4.7k 4.7k c08 dcx114tu 10k - c12 sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j ? 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 0 8 all dimensions in mm a m j l d b c h k f cxx ym r1, r2 r1 only schematic diagram q1: npn transistor q2: pnp transistor r 1 r 1 b q 2 b q 1 c q 1 c q 2 1 2 3 4 5 6 e q 2 e q 1 r 2 r 2 q 2 q 1 r 1 r 1 c q 1 q 1 q 2 1 2 3 4 5 6 b q 2 b q 1 c q 2 e q 2 e q 1 maximum ratings npn section @t a = 25c unless otherwise specified characteristic symbol value unit supply voltage, (6) to (1) v cc 50 v input voltage, (2) to (1) dcx124eu dcx144eu dcx114yu dcx123ju dcx114eu dcx143tu dcx143eu dcx114tu v in -10 to +40 -10 to +40 -6 to +40 -5 to +12 -10 to +40 -5v max -10 to +30 -5v max v output current dcx124eu dcx144eu dcx114yu dcx123ju dcx114eu dcx143tu dcx143eu dcx114tu i o 30 30 70 100 50 100 100 100 ma output current all i c (max) 100 ma power dissipation (total) (note 2) p d 200 mw thermal resistance, junction to ambient air (note 1) r ja 625 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 1. mounted on fr4 pc board with recommended pad layout at http:// www.di odes.com/datas heets/ap02001.pdf. 2. 150mw per element must not be exceeded. 3. no purposefully added lead. 4. diodes inc.'s "green" policy can be found on our website at http:// www.di odes.com/products/l ead_free/index.php. 5. product manufactured with date c ode uo (week 40, 2007) and newer are built wi th green molding compound. product manufactur ed prior to date code uo are bu ilt with non-green molding compound and may contain halogens or sb 2 o 3 fire retardants. ds30347 rev. 11 - 2 1 of 12 www.diodes.com dcx (xxxx) u ? diodes incorporated
ds30347 rev. 11 - 2 2 of 12 www.diodes.com dcx (xxxx) u ? diodes incorporated maximum ratings pnp section @t a = 25c unless otherwise specified characteristic symbol value unit supply voltage, (4) to (3) v cc 50 v input voltage, (5) to (4) dcx124eu dcx144eu dcx114yu dcx123ju dcx114eu dcx143tu dcx143eu dcx114tu v in +10 to -40 +10 to -40 +6 to -40 +5 to -12 +10 to -40 +5v max +10 to -30 +5v max v output current dcx124eu dcx144eu dcx114yu dcx123ju dcx114eu dcx143tu dcx143eu dcx114tu i o -30 -30 -70 -100 -50 -100 -100 -100 ma output current all i c (max) -100 ma power dissipation (total) (page 1: note 2) p d 200 mw thermal resistance, junction to ambient air (page 1: note 1) r ja 625 c/w operating and storage temperature range t j , t stg -55 to +150 c
ds30347 rev. 11 - 2 3 of 12 www.diodes.com dcx (xxxx) u ? diodes incorporated electrical characteristics npn section @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition r1 only (dcx143tu & dcx114tu) collector-base breakdown voltage bv cbo 50 ? ? v i c = 50 a collector-emitter breakdown voltage bv ceo 50 ? ? v i c = 1ma emitter-base breakdown voltage bv ebo 5 ? ?? v i e = 50 a collector cutoff current i cbo ? ? 0.5 a v cb = 50v emitter cutoff current i ebo ? ? 0.5 a v eb = 4v collector-emitter saturation voltage v ce(sat) ? ? 0.3 v i c /i b = 2.5ma / 0.25ma dcx143tu i c /i b = 1ma / 0.1ma dcx114tu dc current transfer ratio h fe 100 250 600 ? i c = 1ma, v ce = 5v input resistor (r 1 ) tolerance r 1 -30 ? +30 % ? gain-bandwidth product f t ? 250 ? mhz v ce = 10v, i e = -5ma, f = 100mhz r1/r2 only dcx124eu 0.5 1.1 dcx144eu 0.5 1.1 dcx114yu 0.3 ? dcx123ju 0.5 ? dcx114eu 0.5 1.1 dcx143eu v l(off) 0.5 1.16 ? v cc = 5v, i o = 100 a dcx124eu 1.9 3.0 v o = 0.3, i o = 5ma dcx144eu 1.9 3.0 v o = 0.3, i o = 2ma dcx114yu ? 1.4 v o = 0.3, i o = 1ma dcx123ju ? 1.1 v o = 0.3, i o = 5ma dcx114eu 1.9 3.0 v o = 0.3, i o = 10ma input voltage dcx143eu v l(on) ? 1.99 3.0 v v o = 0.3, i o = 20ma dcx124eu i o /i l = 10ma / 0.5ma dcx144eu i o /i l = 10ma / 0.5ma dcx114yu i o /i l = 5ma / 0.25ma dcx123ju i o /i l = 5ma / 0.25ma dcx114eu i o /i l = 10ma / 0.5ma output voltage dcx143eu v o(on) ? 0.1 0.3 v i o /i l = 10ma / 0.5ma dcx124eu 0.36 dcx144eu 0.18 dcx114yu 0.88 dcx123ju 3.6 dcx114eu 0.88 input current dcx143eu i l ? ? 0.88 ma v i = 5v output current i o(off) ? ? 0.5 a v cc = 50v, v i = 0v dcx124eu 56 v o = 5v, i o = 5ma dcx144eu 68 v o = 5v, i o = 5ma dcx114yu 68 v o = 5v, i o = 10ma dcx123ju 80 v o = 5v, i o = 10ma dcx114eu 30 v o = 5v, i o = 5ma dc current gain dcx143eu g l 50 ? ? ? v o = 5v, i o = 10ma input resistor (r 1 ) tolerance r 1 -30 ? +30 % ? resistance ratio tolerance r 2 /r 1 -20 ? +20 % ? gain-bandwidth product f t ? 250 ? mhz v ce = 10v, i e = 5ma, f = 100mhz
ds30347 rev. 11 - 2 4 of 12 www.diodes.com dcx (xxxx) u ? diodes incorporated electrical characteristics pnp section @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition r1 only (dcx143tu & dcx114tu) collector-base breakdown voltage bv cbo -50 ? ? v i c = -50 a collector-emitter breakdown voltage bv ceo -50 ? ? v i c = -1ma emitter-base breakdown voltage bv ebo -5 ? ? v i e = -50 a collector cutoff current i cbo ? ? -0.5 a v cb = -50v emitter cutoff current i ebo ? ? -0.5 a v eb = -4v collector-emitter saturation voltage v ce(sat) ? ? -0.3 v i c /i b = 2.5ma / 0.25ma dcx143tu i c /i b = 1ma / 0.1ma dcx114tu dc current transfer ratio h fe 100 250 600 ? i c = -1ma, v ce = -5v input resistor (r 1 ) tolerance r 1 -30 ? +30 % ? gain-bandwidth product f t ? 250 ? mhz v ce = -10v, i e = 5ma, f = 100mhz r1/r2 only dcx124eu -0.5 -1.1 dcx144eu -0.5 -1.1 dcx114yu -0.3 ? dcx123ju -0.5 ? dcx114eu -0.5 -1.1 dcx143eu v l(off) -0.5 -1.16 ? v cc = -5v, i o = -100 a dcx124eu -1.9 -3.0 v o = -0.3, i o = -5ma dcx144eu -1.9 -3.0 v o = -0.3, i o = -2ma dcx114yu ? -1.4 v o = -0.3, i o = -1ma dcx123ju ? -1.1 v o = -0.3, i o = -5ma dcx114eu -1.9 -3.0 v o = -0.3, i o = -10ma input voltage dcx143eu v l(on) ? -2.5 -3.0 v v o = -0.3, i o = -20ma dcx124eu i o /i l = -10ma / -0.5ma dcx144eu i o /i l = -10ma / -0.5ma dcx114yu i o /i l = -5ma / -0.25ma dcx123ju i o /i l = -5ma / -0.25ma dcx114eu i o /i l = -10ma / -0.5ma output voltage dcx143eu v o(on) ? -0.1 -0.3 v i o /i l = -10ma / -0.5ma dcx124eu -0.36 dcx144eu -0.18 dcx114yu -0.88 dcx123ju -3.6 dcx114eu -0.88 input current dcx143eu i l ? ? -0.88 ma v i = -5v output current i o(off) ? ? -0.5 a v cc = 50v, v i = 0v dcx124eu 56 v o = -5v, i o = -5ma dcx144eu 68 v o = -5v, i o = -5ma dcx114yu 68 v o = -5v, i o = -10ma dcx123ju 80 v o = -5v, i o = -10ma dcx114eu 30 v o = -5v, i o = -5ma dc current gain dcx143eu g l 40 ? ? ? v o = -5v, i o = -10ma input resistor (r 1 ) tolerance r 1 -30 ? +30 % ? resistance ratio tolerance r 2 /r 1 -20 ? +20 % ? gain-bandwidth product f t ? 250 ? mhz v ce = -10v, i e = -5ma, f = 100mhz
typical curves ? total device 05 0 1 2 51 5 0 250 200 150 50 100 0 t , ambient temperature ( c) fig. 1 power derating curve a p , p o we r dissi p a t i o n (mw) d typical curves ? dcx123ju pnp section 0.001 0.01 0.1 1 0 10 20 30 40 50 v, c o lle c t o r -emi t t e r saturation voltage (v) ce(sat) i , collector current (ma) fig. 2 typical v vs. i c ce(sat) c i/i = 10 cb -25 c 75 c 25 c 10 1,000 100 11 0 h, d 1 0 0 c c u r r en t g ain fe i , collector current (ma) fig. 3 typical dc current gain c ds30347 rev. 11 - 2 5 of 12 www.diodes.com dcx (xxxx) u ? diodes incorporated 0.001 0.01 1 10 100 0 12 34 8 910 i, c o lle c t o r c u r r en t (ma) c v , input voltage (v) fig. 5 typical collector current vs. input voltage in 5 6 7 0.1 t = 75c a 0 2 4 6 12 0 20 30 c , c a p a c i t an c e (p f ) ob v , reverse bias voltage (v) fig. 4 typical output capacitance r 10 51 5 25 8 10 i = 0ma f = 1mhz e
typical curves ? dcx123ju pnp section (continued) 0.1 1 10 0 10203040 i , collector current (ma) fig. 6 typical input voltage vs. collector current c 50 v , input voltage (v) in typical curves ? dcx123ju npn section 10 1,000 100 11 0 h, d 0.001 0.01 0.1 1 0 10 20 30 40 50 v, c o lle c t o r -emi t t e r saturation voltage (v) ce(sat) i , collector current (ma) fig. 7 typical v vs. i c ce(sat) c i/i = 10 cb t = -25c a t = 75c a t = 25c a 1 0 0 c c u r r e n t g ai n fe i , collector current (ma) fig. 8 typical dc current gain c v = 10v ce t = 75c a ds30347 rev. 11 - 2 6 of 12 www.diodes.com dcx (xxxx) u ? diodes incorporated 0.001 0.01 1 10 100 0 12 3 48 910 i, c o lle c t o r c u r r en t (ma) c v , input voltage (v) fig. 10 typical collector current vs. input voltage in t = -25c a 5 67 t = 25c a 0.1 v = 5v o t = 75c a 0 1 2 3 4 0 20 30 c , c a p a c i t an c e (p f ) ob v , reverse bias voltage (v) fig. 9 typical output capacitance r 10 5 15 25 i = 0ma f = 1mhz e
typical curves ? dcx123ju npn section (continued) 0.1 1 10 010203040 i , collector current (ma) fig. 11 typical input voltage vs. collector current c 50 v , input voltage (v) in typical curves ? dcx143eu pnp section h , dc current gain fe i , collector current (ma) fig. 13 typical dc current gain c i , collector current (a) c v , collector emitter voltage (v) fig. 12 typical v vs. i ce ce c i = 0.5ma b i = 1ma b i = 4.5ma b i = 3.5ma b i = 3ma b i = 2.5ma b i = 1.5ma b i = 2ma b i = 4ma b ds30347 rev. 11 - 2 7 of 12 www.diodes.com dcx (xxxx) u ? diodes incorporated v , collector-emitter saturation voltage (v) ce(sat) i , collector current (ma) fig. 14 typical v vs. i c ce(sat) c i/i = 10 cb v , base-em i t t e r v o l t a g e (v ) be i , collector current (ma) fig. 15 typical v vs. i c be c
typical curves ? dcx143eu pnp section (continued) v , input voltage (v) i(on) i , output current (ma) fig. 17 typical v vs. i c i(on) c v , base - em i t t e r saturation voltage (v) be(sat) i , collector current (ma) fig. 16 typical v vs. i c be(sat) c typical curves ? dcx143eu npn section h , dc current gain fe i , collector current (ma) fig. 19 typical dc current gain c i , c o lle c t o r c u r r en t (a ) c v , collector emitter voltage (v) fig. 18 typical v vs. i ce ce c v , collector-emitter saturation voltage (v) ce(sat) i , collector current (ma) fig. 20 typical v vs. i c ce(sat) c v , base-em i t t e r v o l t a g e (v ) be i , collector current (ma) fig. 21 typical v vs. i c be c ds30347 rev. 11 - 2 8 of 12 www.diodes.com dcx (xxxx) u ? diodes incorporated
typical curves ? dcx143eu npn section (continued) v , input voltage (v) i(on) i , output current (ma) fig. 23 typical v vs. i c i(on) c v , base-emitter saturation voltage (v) be(sat) i , collector current (ma) fig. 22 typical v vs. i c be(sat) c typical curves ? dcx114tu pnp section 10 1,000 100 1 11 0 h, d 0.001 0.01 0.1 1 0 10 20 30 40 50 v, c o lle c t o r -emi t t e r saturation voltage (v) ce(sat) i , collector current (ma) fig. 24 typical v vs. i c ce(sat) c i/i = 10 cb t = -25c a t = 75c a t = 25c a 1 0 0 c c u r r en t g ain fe i , collector current (ma) fig. 25 typical dc current gain c 0 1 3 4 02 0 ds30347 rev. 11 - 2 9 of 12 www.diodes.com dcx (xxxx) u ? diodes incorporated 3 0 0.01 0.1 1 10 100 01234 89 10 i, c o lle c t o r c u r r e n t (ma) c v , input voltage (v) fig. 27 typical collector current vs. input voltage in t = -25c a 5 67 0.001 c , c a p a c i t a n c e (p f ) ob v , reverse bias voltage (v) fig. 26 typical output capacitance r 10 51 52 5 i = 0ma f = 1mhz e 2
typical curves ? dcx114tu pnp section (continued) 0.1 1 10 010203040 i , collector current (ma) fig. 28 typical input voltage vs. collector current c 50 v , input voltage (v) in typical curves ? dcx114tu npn section 0.001 0.01 0.1 1 0 10 20 30 40 50 v, c o lle c t o r -emi t t e r saturation voltage (v) ce(sat) i , collector current (ma) fig. 29 typical v vs. i c ce(sat) c i/i = 10 cb t = -25c a t = 75c a t = 25c a 10 1,000 100 1 11 0 h, d 1 0 0 c c u r r en t g ain fe i , collector current (ma) fig. 30 typical dc current gain c 0 1 2 3 4 0 20 30 c , c a p a c i t an c e (p f ) ob v , reverse bias voltage (v) fig. 31 typical output capacitance r 10 5 15 25 i = 0ma f = 1mhz e 0.01 0.1 1 10 100 012 34 89 10 i, c o lle c t o r c u r r e n t (ma) c v , input voltage (v) fig. 32 typical collector current vs. input voltage in t =-25c a 5 67 t = 75c a t = 25c a 0.001 ds30347 rev. 11 - 2 10 of 12 www.diodes.com dcx (xxxx) u ? diodes incorporated
typical curves ? dcx114tu npn section (continued) 0.1 1 10 010203040 i , collector current (ma) fig. 33 typical input voltage vs. collector current c 50 v , input voltage (v) in ordering information (note 6) ds30347 rev. 11 - 2 11 of 12 www.diodes.com dcx (xxxx) u ? diodes incorporated device packaging shipping dcx124eu-7-f sot-363 3000/tape & reel dcx144eu-7-f sot-363 3000/tape & reel dcx114yu-7-f sot-363 3000/tape & reel dcx123ju-7-f sot-363 3000/tape & reel dcx114eu-7-f sot-363 3000/tape & reel dcx143tu-7-f sot-363 3000/tape & reel dcx143eu-7-f sot-363 3000/tape & reel dcx114tu-7-f sot-363 3000/tape & reel notes: 6. for packaging details, go to our website at http://www.di odes.com/datas heets/ap02007.pdf. marking information cxx ym cxx = product type marking code ym = date code marking y = year ex: t = 2006 m = month ex: 9 = september date code key year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 code t u v w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d
ds30347 rev. 11 - 2 12 of 12 www.diodes.com dcx (xxxx) u ? diodes incorporated suggested pad layout x z y c e e g important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the ri ghts of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products are represented on our website, harmless against all damages. life support diodes incorporated products are not authoriz ed for use as critical components in life support devices or systems without the e xpressed written approval of the president of diodes incorporated. dimensions value (in mm) z 2.5 g 1.3 x 0.42 y 0.6 c 1.9 e 0.65

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